Provided is a technology for monitoring the electrical resistance of an element such as a fuse whose resistance is changed due to the electrical stress among internal circuits included in a semiconductor device. The present invention provides a monitoring circuit to monitor the change in the device specification during the device is being programmed and after the device is programmed. The present invention enables the verification of an optimized condition to let the device have a certain electrical resistance, by comparing the load voltage and the fuse voltage with the reference voltage that can sense the range of resistance variation more precisely. Also, it can guarantee device reliability since it is still possible to sense electrical resistance after the electrical stress is being given. Also, the present invention can increase the utility of the fuse by possessing an output to monitor electrical resistance sensed inside of the semiconductor.