发明授权
- 专利标题: Open-drain output buffer for single-voltage-supply CMOS
- 专利标题(中): 用于单电源CMOS的漏极开路输出缓冲器
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申请号: US12699239申请日: 2010-02-03
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公开(公告)号: US08098090B2公开(公告)日: 2012-01-17
- 发明人: Hung Pham Le
- 申请人: Hung Pham Le
- 申请人地址: US CA Fremont
- 专利权人: Exar Corporation
- 当前专利权人: Exar Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 代理商 Ardeshir Tabibi
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
An open-drain output buffer is operative to sustain relatively high voltages applied to an output pad. The open-drain buffer includes a number of floating wells, output switching devices and corresponding well-bias selectors to ensure that no gate oxide sustains voltages greater than a predefined value. PMOS and NMOS well-bias selectors operate to select and provide an available highest or lowest voltage, respectively, to bias corresponding well-regions and ensure no device switching terminals are electrically over stressed. As output related terminals experience switching related voltage excursions, the well-bias selectors select alternate terminals to continue selection of the respective highest or lowest voltages available and provide correct well-biasing conditions. Voltage dividers are incorporated to generate well-biasing control voltages. By electrical coupling across maximal voltages, the voltage dividers generate reference voltages that induce proper selection of well-bias voltages to the floating wells.
公开/授权文献
- US20100127762A1 OPEN-DRAIN OUTPUT BUFFER FOR SINGLE-VOLTAGE-SUPPLY CMOS 公开/授权日:2010-05-27