发明授权
US08101506B2 Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component
有权
在半导体本体和半导体部件中制造掩埋的n掺杂半导体区域的方法
- 专利标题： Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component
- 专利标题（中）： 在半导体本体和半导体部件中制造掩埋的n掺杂半导体区域的方法
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申请号： US12719487申请日： 2010-03-08
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公开(公告)号： US08101506B2公开(公告)日： 2012-01-24
- 发明人: Hans-Joachim Schulze , Josef Lutz , Franz-Josef Niedernostheide , Ralf Siemieniec
- 申请人： Hans-Joachim Schulze , Josef Lutz , Franz-Josef Niedernostheide , Ralf Siemieniec
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Dicke, Billig & Czaja, PLLC
- 优先权： DE102004039208 20040812
- 主分类号： H01L21/322
- IPC分类号： H01L21/322
摘要：
A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.