Invention Grant
- Patent Title: Parallel-structured switched variable inductor circuit
- Patent Title (中): 并联结构的可变电感电路
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Application No.: US12275608Application Date: 2008-11-21
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Publication No.: US08102218B2Publication Date: 2012-01-24
- Inventor: Yun-seong Eo , Hee-mun Bang , Kwang-du Lee , Heung-bae Lee
- Applicant: Yun-seong Eo , Hee-mun Bang , Kwang-du Lee , Heung-bae Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2005-12415 20050215
- Main IPC: H03B5/12
- IPC: H03B5/12
Abstract:
An inductor circuit includes a pair of inductors connected in parallel with each other and a switch for turning on and off electric power to one of the pair of inductors. The inductance of the inductor circuit can be varied and the quality factor Q can be improved. Further, RF circuits employing the inductor circuit can generate an intended operating frequency.
Public/Granted literature
- US20090102572A1 PARALLEL-STRUCTURED SWITCHED VARIABLE INDUCTOR CIRCUIT Public/Granted day:2009-04-23
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