Invention Grant
US08103221B2 High-isolation transmit/receive switch on CMOS for millimeter-wave applications
有权
用于毫米波应用的CMOS上的高隔离发射/接收开关
- Patent Title: High-isolation transmit/receive switch on CMOS for millimeter-wave applications
- Patent Title (中): 用于毫米波应用的CMOS上的高隔离发射/接收开关
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Application No.: US12130869Application Date: 2008-05-30
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Publication No.: US08103221B2Publication Date: 2012-01-24
- Inventor: Chien M. Ta , Stan Skafidas , Rob Evans
- Applicant: Chien M. Ta , Stan Skafidas , Rob Evans
- Applicant Address: AU Eveleigh
- Assignee: National ICT Australia Limited
- Current Assignee: National ICT Australia Limited
- Current Assignee Address: AU Eveleigh
- Main IPC: H04B1/46
- IPC: H04B1/46

Abstract:
A CMOS monolithic transmit/receive switch comprises a single pole double throw switch (SPDT) module operable to selectively connect an antenna port to either a transmit port or to a receive port. A transmit matching network comprising a first transmission line matches the impedance of the transmit port of the SPDT module to a transmit impedance, and a first shunt transistor is operable to selectively ground a transmitter end of the first transmission line. A receive matching network comprising a second transmission line matches the impedance of the receive port of the SPDT module to a receive impedance, and a second shunt transistor is operable to selectively ground a receiver end of the second transmission line.
Public/Granted literature
- US20090298443A1 HIGH-ISOLATION TRANSMIT/RECEIVE SWITCH ON CMOS FOR MILLIMETER-WAVE APPLICATIONS Public/Granted day:2009-12-03
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