发明授权
- 专利标题: Patterning process
- 专利标题(中): 图案化过程
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申请号: US12236129申请日: 2008-09-23
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公开(公告)号: US08105764B2公开(公告)日: 2012-01-31
- 发明人: Jun Hatakeyama , Takao Yoshihara , Toshinobu Ishihara
- 申请人: Jun Hatakeyama , Takao Yoshihara , Toshinobu Ishihara
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2007-247114 20070925; JP2008-27132 20080207
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; G03F7/004 ; G03F7/40
摘要:
A pattern is formed through positive/negative reversal by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin, a photoacid generator, and an organic solvent onto a substrate, prebaking the resist composition, exposing the resist film to high-energy radiation, post-exposure heating, and developing the exposed resist film with an alkaline developer to form a positive pattern; irradiating or heating the positive pattern to facilitate elimination of acid labile groups and crosslinking for improving alkali solubility and imparting solvent resistance; coating a reversal film-forming composition thereon to form a reversal film; and applying an alkaline wet etchant thereto for dissolving away the positive pattern.
公开/授权文献
- US20090081595A1 PATTERNING PROCESS 公开/授权日:2009-03-26