发明授权
US08105884B2 Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
有权
交叉点存储器阵列，其制造方法，用于压印处理的主机以及制造主机的方法
- 专利标题： Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
- 专利标题（中）： 交叉点存储器阵列，其制造方法，用于压印处理的主机以及制造主机的方法
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申请号： US12588107申请日： 2009-10-05
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公开(公告)号： US08105884B2公开(公告)日： 2012-01-31
- 发明人: Byung-kyu Lee , Du-hyun Lee , Myoung-jae Lee
- 申请人： Byung-kyu Lee , Du-hyun Lee , Myoung-jae Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2008-0097788 20081006; KR10-2008-0111218 20081110; KR10-2009-0012118 20090213
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
A cross point memory array includes a structure in which holes are formed in an insulating layer and a storage node is formed in each of the holes. The storage node may include a memory resistor and a switching structure. The master for an imprint process used to form the cross-point memory array includes various pattern shapes, and the method of manufacturing the master uses various etching methods.
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