发明授权
- 专利标题: Semiconductor memory and memory system
- 专利标题(中): 半导体存储器和存储器系统
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申请号: US12238900申请日: 2008-09-26
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公开(公告)号: US08107313B2公开(公告)日: 2012-01-31
- 发明人: Hiroyuki Kobayashi
- 申请人: Hiroyuki Kobayashi
- 申请人地址: JP Yokohama
- 专利权人: Fujitsu Semiconductor Limited
- 当前专利权人: Fujitsu Semiconductor Limited
- 当前专利权人地址: JP Yokohama
- 代理机构: Arent Fox, LLP
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
A plurality of cell arrays are assigned different addresses. An access information unit holds access enable information indicating the number of the cell arrays to be simultaneously activated. An array control unit activates at least one of the cell arrays corresponding to the access enable information, in response to an access request, and forcibly activates at least one of the cell arrays not corresponding to the access enable information, in response to a forced access request. Consequently, it is possible to activate the inactivated cell array not corresponding to the access enable information before the supply of the access request. Therefore, even when the number of the cell arrays to be simultaneously activated is small, it is possible to execute access operations without interruption. As a result, it is possible to access the cell arrays with minimum power consumption without lowering access efficiency.
公开/授权文献
- US20090019242A1 SEMICONDUCTOR MEMORY AND MEMORY SYSTEM 公开/授权日:2009-01-15
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