Invention Grant
- Patent Title: High resolution lithography system and method
- Patent Title (中): 高分辨率光刻系统及方法
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Application No.: US11043304Application Date: 2005-01-26
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Publication No.: US08110345B2Publication Date: 2012-02-07
- Inventor: Chin-Hsiang Lin , Burn Jeng Lin
- Applicant: Chin-Hsiang Lin , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/26

Abstract:
Provided are a high resolution lithography system and method. In one example, a method for producing a pattern on a substrate includes separating the pattern into at least a first sub-pattern containing lines oriented in a first direction and a second sub-pattern containing lines oriented in a second direction. Lines oriented in the first direction are created on a first layer of photosensitive material on the substrate using a first standing wave interference pattern. A portion of the created lines are trimmed to create the first sub-pattern. A second layer of photosensitive material is applied to the substrate after creating the first sub-pattern. Lines oriented in the second direction are created on the second layer using a second standing wave interference pattern. A portion of the created lines are trimmed to create the second sub-pattern.
Public/Granted literature
- US20050147921A1 High resolution lithography system and method Public/Granted day:2005-07-07
Information query
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