发明授权
US08110475B2 Method for forming a memory device with C-shaped deep trench capacitors
有权
用于形成具有C形深沟槽电容器的存储器件的方法
- 专利标题： Method for forming a memory device with C-shaped deep trench capacitors
- 专利标题（中）： 用于形成具有C形深沟槽电容器的存储器件的方法
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申请号： US12244343申请日： 2008-10-02
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公开(公告)号： US08110475B2公开(公告)日： 2012-02-07
- 发明人: Hou-Hong Chou
- 申请人： Hou-Hong Chou
- 申请人地址： TW Taoyuan
- 专利权人： Inotera Memories, Inc.
- 当前专利权人： Inotera Memories, Inc.
- 当前专利权人地址： TW Taoyuan
- 优先权： TW97110956A 20080327
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The invention is related to a memory device, including a substrate, a capacitor which is substantially C-shaped in a cross section parallel to the substrate surface and a word line coupling the capacitor. In an embodiment, the C-shaped capacitor is a deep trench capacitor, and in alternative embodiment, the C-shaped capacitor is a stack capacitor. Both inner edge and outer edge of the C-shaped capacitor can be used for providing capacitance.
公开/授权文献
- US20090242954A1 MEMORY DEVICE AND FABRICATION THEREOF 公开/授权日：2009-10-01
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