发明授权
US08110483B2 Forming an extremely thin semiconductor-on-insulator (ETSOI) layer
有权
形成极薄的绝缘体上半导体（ETSOI）层
- 专利标题： Forming an extremely thin semiconductor-on-insulator (ETSOI) layer
- 专利标题（中）： 形成极薄的绝缘体上半导体（ETSOI）层
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申请号： US12603737申请日： 2009-10-22
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公开(公告)号： US08110483B2公开(公告)日： 2012-02-07
- 发明人: Wagdi W. Abadeer , Kiran V. Chatty , Jason E. Cummings , Toshiharu Furukawa , Robert J. Gauthier , Jed H. Rankin, Jr. , Robert R. Robison , William R. Tonti
- 申请人： Wagdi W. Abadeer , Lilian Kamal, legal representative , Kiran V. Chatty , Jason E. Cummings , Toshiharu Furukawa , Robert J. Gauthier , Jed H. Rankin, Jr. , Robert R. Robison , William R. Tonti
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Hoffman Warnick LLC
- 代理商 Richard Kotulak
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
Solutions for forming an extremely thin semiconductor-on-insulator (ETSOI) layer are disclosed. In one embodiment, a method includes providing a wafer including a plurality of semiconductor-on-insulator (SOI) layer regions separated by at least one shallow trench isolation (STI); amorphizing the plurality of SOI layer regions by implanting the plurality of SOI layer regions with an implant species; and removing a portion of the amorphized SOI layer region to form at least one recess in the amorphized SOI layer region.