发明授权
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
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申请号: US12408953申请日: 2009-03-23
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公开(公告)号: US08111087B2公开(公告)日: 2012-02-07
- 发明人: Tomoaki Inokuchi , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
- 申请人: Tomoaki Inokuchi , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-084937 20080327
- 主分类号: H03K19/094
- IPC分类号: H03K19/094
摘要:
A semiconductor integrated circuit includes an n-channel spin FET including one of a magnetic tunnel junction and a magneto-semiconductor junction, the n-channel spin FET including a gate terminal to receive an input signal, a source terminal to receive a first power supply potential, and a drain terminal connected to an output terminal, a p-channel FET including a gate terminal to receive a clock signal, a source terminal to receive a second power supply potential, and a drain terminal connected to the output terminal, a subsequent circuit connected to the output terminal, and a control circuit which turns on the p-channel FET to start charging the output terminal, then turns off the p-channel FET to end the charging, and supplies the input signal to the gate terminal of the n-channel spin FET.
公开/授权文献
- US20090243653A1 SEMICONDUCTOR INTEGRATED CIRCUIT 公开/授权日:2009-10-01
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