发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US12273874申请日： 2008-11-19
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公开(公告)号： US08111538B2公开(公告)日： 2012-02-07
- 发明人: Keiji Hosotani , Yoshiaki Asao , Yoshihisa Iwata
- 申请人： Keiji Hosotani , Yoshiaki Asao , Yoshihisa Iwata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2007-302134 20071121
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A semiconductor memory device includes a memory cell array having a plurality of memory cells which are set into low-resistance states/high-resistance states according to “0” data/“1” data. An allocation of the “0” data/“1” data and the low-resistance state/high-resistance state is switched when a power source is turned on.
公开/授权文献
- US20090129141A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2009-05-21