Invention Grant
- Patent Title: Programming MRAM cells using probability write
- Patent Title (中): 使用概率写编程MRAM单元
-
Application No.: US12617982Application Date: 2009-11-13
-
Publication No.: US08111544B2Publication Date: 2012-02-07
- Inventor: Shine Chung , Hung-Sen Wang , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang
- Applicant: Shine Chung , Hung-Sen Wang , Tao-Wen Chung , Chun-Jung Lin , Yu-Jen Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell.
Public/Granted literature
- US20100214825A1 Programming MRAM Cells Using Probability Write Public/Granted day:2010-08-26
Information query
