发明授权
- 专利标题: Optical ovonic threshold switch
- 专利标题(中): 光学超声门限开关
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申请号: US12269901申请日: 2008-11-13
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公开(公告)号: US08111546B2公开(公告)日: 2012-02-07
- 发明人: Stanford R. Ovshinsky
- 申请人: Stanford R. Ovshinsky
- 申请人地址: US MI Troy
- 专利权人: Ovonyx, Inc.
- 当前专利权人: Ovonyx, Inc.
- 当前专利权人地址: US MI Troy
- 代理商 Kevin L. Bray
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A method and device for accomplishing transformation of a switching material from a resistive state to a conductive state. The method utilizes a non-electrical source of energy to effect the switching transformation. The switching material may be a chalcogenide switching material, where the non-electrical source of energy initiates switching by liberating lone pair electrons from bound states of chalcogen atoms. The liberated lone pair electrons form a conductive filament having the characteristics of a solid state plasma to permit high current densities to pass through the switching material. The device includes a switching material with electrical contacts and may be interconnected with other elements in a circuit to regulate electrical communication therebetween.
公开/授权文献
- US20100117040A1 Optical Ovonic Threshold Switch 公开/授权日:2010-05-13
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