Invention Grant
- Patent Title: NAND step voltage switching method
- Patent Title (中): NAND阶跃电压切换方法
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Application No.: US12696279Application Date: 2010-01-29
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Publication No.: US08111555B2Publication Date: 2012-02-07
- Inventor: Akira Goda , Taehoon Kim , Doyle Rivers , Roger Porter
- Applicant: Akira Goda , Taehoon Kim , Doyle Rivers , Roger Porter
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
Methods and memories having switching points for changing Vstep increments according to a level of a multilevel cell being programmed include programming at a smaller Vstep increment in narrow threshold voltage situations and programming at a larger Vstep increment where faster programming is desired.
Public/Granted literature
- US20100128529A1 NAND STEP VOLTAGE SWITCHING METHOD Public/Granted day:2010-05-27
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