发明授权
US08111563B2 Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same
失效
多级非易失性存储器件具有快速执行程序速度和编程方式相同的功能
- 专利标题： Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same
- 专利标题（中）： 多级非易失性存储器件具有快速执行程序速度和编程方式相同的功能
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申请号： US12659473申请日： 2010-03-10
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公开(公告)号： US08111563B2公开(公告)日： 2012-02-07
- 发明人: Ho-Jung Kim , Sang-Beom Kang , Chul Woo Park , Hyun Ho Choi
- 申请人： Ho-Jung Kim , Sang-Beom Kang , Chul Woo Park , Hyun Ho Choi
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2009-0025757 20090326
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A nonvolatile memory device having a plurality of multi-level memory cells, the plurality being at least two, may be programmed by writing a least significant bit for each multi-level memory cell of the plurality of memory cells and, after the least significant bit has been written for each multi-level memory cell of the plurality of memory cells, writing a next significant bit for each multi-level memory cell.
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