Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12850736Application Date: 2010-08-05
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Publication No.: US08111567B2Publication Date: 2012-02-07
- Inventor: Takayuki Inoue , Yoshiyuki Kurokawa
- Applicant: Takayuki Inoue , Yoshiyuki Kurokawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-349191 20061226
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
An object is to provide a semiconductor device having a memory which can efficiently improve a yield by employing a structure which facilitates the use of a spare memory cell. The semiconductor device includes a memory cell array having a memory cell and a spare memory cell, a decoder connected to the memory cell and the spare memory cell, a data holding circuit connected to the decoder, and a battery which supplies electric power to the data holding circuit. The spare memory cell operates in accordance with an output from the data holding circuit.
Public/Granted literature
- US20100302887A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-12-02
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