Invention Grant
US08111569B2 Latch structure and bit line sense amplifier structure including the same
有权
锁存结构和位线检测放大器结构包括相同
- Patent Title: Latch structure and bit line sense amplifier structure including the same
- Patent Title (中): 锁存结构和位线检测放大器结构包括相同
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Application No.: US12644979Application Date: 2009-12-22
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Publication No.: US08111569B2Publication Date: 2012-02-07
- Inventor: Kang Seol Lee , Eun Souk Lee
- Applicant: Kang Seol Lee , Eun Souk Lee
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2007-0024460 20070313
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A latch structure includes a first inverter that includes a first PMOS transistor and a first NMOS transistor, and a second inverter that includes a second PMOS transistor and a second NMOS transistor, receives an output signal of the first inverter, and outputs an input signal to the first inverter. The sources of the first and second transistors of the same type are connected to a common straight source line.
Public/Granted literature
- US20100097873A1 LATCH STRUCTURE AND BIT LINE SENSE AMPLIFIER STRUCTURE INCLUDING THE SAME Public/Granted day:2010-04-22
Information query
