Invention Grant
- Patent Title: Fabrication method of light-emitting device
- Patent Title (中): 发光装置的制造方法
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Application No.: US12392899Application Date: 2009-02-25
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Publication No.: US08113903B2Publication Date: 2012-02-14
- Inventor: Tae-Geun Kim , Wan-Ho Lee
- Applicant: Tae-Geun Kim , Wan-Ho Lee
- Applicant Address: KR Seoul
- Assignee: Korea University Industrial & Academic Collaboration Foundation
- Current Assignee: Korea University Industrial & Academic Collaboration Foundation
- Current Assignee Address: KR Seoul
- Agency: IPLA P.A.
- Agent James E. Bame
- Priority: KR10-2008-0046383 20080520
- Main IPC: H01J9/02
- IPC: H01J9/02 ; H01J9/24

Abstract:
A flip-chip type light-emitting device and manufacturing method thereof provides a curved surface formed on the transparent electrode layer and a reflective layer transferred with the curved surface of the transparent electrode layer is additionally formed on the transparent electrode layer, so that the light generated from the active layer is incident to the reflective layer through the p-type nitride layer and the transparent electrode layer, and then is reflected from the curved surface of the reflective layer so as to exhibit an effect of extracting a larger amount of light in a vertical direction as compared to the conventional light-emitting device.
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