- 专利标题: Single-walled carbon nanotube and aligned single-walled carbon nanotube bulk structure, and their production process, production apparatus and application use
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申请号: US12945073申请日: 2010-11-12
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公开(公告)号: US08114518B2公开(公告)日: 2012-02-14
- 发明人: Kenji Hata , Sumio Iijima , Motoo Yumura , Don N. Futaba
- 申请人: Kenji Hata , Sumio Iijima , Motoo Yumura , Don N. Futaba
- 申请人地址: JP Tokyo
- 专利权人: National Institute of Advanced Industrial Science and Technology
- 当前专利权人: National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址: JP Tokyo
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 优先权: JP2004-219346 20040727; JP2004-333683 20041117; JP2005-063704 20050308
- 主分类号: B32B9/00
- IPC分类号: B32B9/00 ; D01F9/12
摘要:
This invention provides an aligned single-layer carbon nanotube bulk structure, which comprises an assembly of a plurality of aligned single-layer carbon nanotube and has a height of not less than 10 μm, and an aligned single-layer carbon nanotube bulk structure which comprises an assembly of a plurality of aligned single-layer carbon nanotubes and has been patterned in a predetermined form. This structure is produced by chemical vapor deposition (CVD) of carbon nanotubes in the presence of a metal catalyst in a reaction atmosphere with an oxidizing agent, preferably water, added thereto. An aligned single-layer carbon nanotube bulk structure, which has realized high purify and significantly large scaled length or height, its production process and apparatus, and its applied products are provided.
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