发明授权
- 专利标题: Method of manufacturing semiconductor device
- 专利标题(中): 制造半导体器件的方法
-
申请号: US12146143申请日: 2008-06-25
-
公开(公告)号: US08114755B2公开(公告)日: 2012-02-14
- 发明人: Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
- 申请人: Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2007-167998 20070626
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.
公开/授权文献
- US20090011570A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2009-01-08