Invention Grant
- Patent Title: Semiconductor device and structure
- Patent Title (中): 半导体器件及结构
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Application No.: US12901902Application Date: 2010-10-11
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Publication No.: US08114757B1Publication Date: 2012-02-14
- Inventor: Zvi Or-Bach , Deepak C. Sekar
- Applicant: Zvi Or-Bach , Deepak C. Sekar
- Applicant Address: US CA San Jose
- Assignee: MonolithIC 3D Inc.
- Current Assignee: MonolithIC 3D Inc.
- Current Assignee Address: US CA San Jose
- Agency: Venable LLP
- Agent Michael A. Sartori; Steven J. Schwarz
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A method of manufacturing a semiconductor wafer, the method comprising providing a base wafer comprising a semiconductor substrate; preparing a first monocrystalline layer comprising semiconductor regions; performing a first layer transfer of the first monocrystalline layer on top of the semiconductor substrate; preparing a second monocrystalline layer comprising semiconductor regions; performing a second layer transfer of the second monocrystalline layer on top of the first monocrystalline layer; and etching portions of the first monocrystalline layer and portions of the second monocrystalline layer.
Information query
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