发明授权
- 专利标题： Self-constrained anisotropic germanium nanostructure from electroplating
- 专利标题（中）： 电镀自限制各向异性锗纳米结构
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申请号： US12541559申请日： 2009-08-14
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公开(公告)号： US08115191B2公开(公告)日： 2012-02-14
- 发明人: Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
- 申请人： Guy Cohen , Hariklia Deligianni , Qiang Huang , Lubomyr T. Romankiw
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation.
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