发明授权
- 专利标题： Semiconductor device including protrusion type isolation layer
- 专利标题（中）： 包括突起型隔离层的半导体器件
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申请号： US12588983申请日： 2009-11-04
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公开(公告)号： US08115246B2公开(公告)日： 2012-02-14
- 发明人: Dong-hyun Kim , Jai-kyun Park
- 申请人： Dong-hyun Kim , Jai-kyun Park
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2009-0031427 20090410
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor device may include a semiconductor layer having a convex portion and a concave portion surrounding the convex portion. The semiconductor device may further include a protrusion type isolation layer filling the concave portion and extending upward so that an uppermost surface of the isolation layer is a at level higher that an uppermost surface of the convex portion.
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