Invention Grant
- Patent Title: Method of operating a phase-change memory device
- Patent Title (中): 操作相变存储器件的方法
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Application No.: US12081451Application Date: 2008-04-16
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Publication No.: US08116125B2Publication Date: 2012-02-14
- Inventor: Cheol-kyu Kim , Yoon-ho Khang , Ki-joon Kim
- Applicant: Cheol-kyu Kim , Yoon-ho Khang , Ki-joon Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0122737 20071129
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/12 ; G11C11/00 ; G11C7/22 ; G11C11/21
Abstract:
A method of operating a phase-change memory device, including a phase-change layer and a unit applying a voltage to the phase-change layer, which includes applying a reset voltage to the phase-change layer, wherein the reset voltage includes at least two pulse voltages which are continuously applied.
Public/Granted literature
- US20090141546A1 Method of operating a phase-change memory device Public/Granted day:2009-06-04
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