Invention Grant
- Patent Title: Methods for fabricating current-carrying structures using voltage switchable dielectric materials
- Patent Title (中): 使用可开关电介质材料制造载流结构的方法
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Application No.: US12953158Application Date: 2010-11-23
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Publication No.: US08117743B2Publication Date: 2012-02-21
- Inventor: Lex Kosowsky
- Applicant: Lex Kosowsky
- Applicant Address: US CA San Jose
- Assignee: Shocking Technologies, Inc.
- Current Assignee: Shocking Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Carr & Ferrell LLP
- Main IPC: H05K3/10
- IPC: H05K3/10

Abstract:
A method includes providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.
Public/Granted literature
- US20110061230A1 Methods for Fabricating Current-Carrying Structures Using Voltage Switchable Dielectric Materials Public/Granted day:2011-03-17
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