发明授权
- 专利标题: Piezoelectric single crystal ingot, producing method therefor and piezoelectric single crystal device
- 专利标题(中): 压电单晶锭,其制造方法和压电单晶器件
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申请号: US12858501申请日: 2010-08-18
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公开(公告)号: US08119024B1公开(公告)日: 2012-02-21
- 发明人: Mitsuyoshi Matsushita
- 申请人: Mitsuyoshi Matsushita
- 申请人地址: JP
- 专利权人: JFE Mineral Company, Ltd.
- 当前专利权人: JFE Mineral Company, Ltd.
- 当前专利权人地址: JP
- 代理机构: DLA Piper LLP (US)
- 主分类号: C04B35/00
- IPC分类号: C04B35/00 ; H01L41/00 ; C30B9/00
摘要:
A piezoelectric single crystal ingot is produced by the Bridgman method and contains a relaxor having a composition of Pb(Mg, Nb)O3 and lead titanate having a composition of PbTiO3. In the piezoelectric single crystal ingot, the compositional fraction of lead titanate does not vary monotonically in the growth direction of a single crystal and the variation of the compositional fraction thereof is within the range of ±2.0 mole percent over a length of 30 mm or more. A piezoelectric single crystal device is produced from the piezoelectric single crystal ingot.
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