发明授权
- 专利标题： Pattern forming method and semiconductor device manufacturing method
- 专利标题（中）： 图案形成方法和半导体器件制造方法
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申请号： US12521184申请日： 2007-12-20
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公开(公告)号： US08119530B2公开(公告)日： 2012-02-21
- 发明人: Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
- 申请人： Masaru Hori , Yoshiro Kabe , Toshihiko Shiozawa , Junichi Kitagawa
- 申请人地址： JP Nagoya-shi JP Tokyo
- 专利权人： National University Corporation Nagoya University,Tokyp Electron Limited
- 当前专利权人： National University Corporation Nagoya University,Tokyp Electron Limited
- 当前专利权人地址： JP Nagoya-shi JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-347710 20061225
- 国际申请： PCT/JP2007/074481 WO 20071220
- 国际公布： WO2008/078637 WO 20080703
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.
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