发明授权
- 专利标题： Oxide formation in a plasma process
- 专利标题（中）： 在等离子体工艺中形成氧化物
-
申请号： US11836683申请日： 2007-08-09
-
公开(公告)号： US08119538B1公开(公告)日： 2012-02-21
- 发明人: Jeong Soo Byun , Krishnaswamy Ramkumar
- 申请人： Jeong Soo Byun , Krishnaswamy Ramkumar
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of making a semiconductor structure is provided. The method includes forming a dielectric layer using a high density plasma oxidation process. The dielectric layer is on a storage layer and the thickness of the storage layer is reduced during the high density plasma oxidation process.
信息查询
IPC分类:
