发明授权
- 专利标题： Method of manufacturing a semiconductor integrated circuit device including elimination of static charge of a treated wafer
- 专利标题（中）： 制造半导体集成电路器件的方法，包括消除经处理晶片的静电荷
-
申请号： US12123584申请日： 2008-05-20
-
公开(公告)号： US08119547B2公开(公告)日： 2012-02-21
- 发明人: Yoshiaki Kobayashi
- 申请人： Yoshiaki Kobayashi
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2000-311480 20001012
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. The semiconductor substrate is taken out of the container. An ionizer is used for static-charge-eliminating the semiconductor substrates before and after process treatment in a transport area between the load port and a treatment section. The static-charge-eliminated semiconductor substrate is accommodated in the container positioned to the load port. Thus, it is possible to decrease foreign materials adhering to the semiconductor substrate and errors in handling the semiconductor substrate.
公开/授权文献
信息查询
IPC分类:
