Invention Grant
- Patent Title: Reduced stiction and mechanical memory in MEMS devices
- Patent Title (中): 降低MEMS器件的静态和机械记忆
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Application No.: US12183601Application Date: 2008-07-31
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Publication No.: US08120155B2Publication Date: 2012-02-21
- Inventor: Earl V. Atnip , Simon Joshua Jacobs
- Applicant: Earl V. Atnip , Simon Joshua Jacobs
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L23/26
- IPC: H01L23/26 ; H01L21/54
Abstract:
A MEMS device is packaged in a process which hydrogen (H) deuterium (D) for reduced stiction. H is exchanged with D by exposing the MEMS device with a deuterium source, such as deuterium gas or heavy water vapor, optionally with the assistance of a direct or downstream plasma.
Public/Granted literature
- US20100025832A1 REDUCED STICTION AND MECHANICAL MEMORY IN MEMS DEVICES Public/Granted day:2010-02-04
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