发明授权
- 专利标题： Line structure and method for manufacturing the same
- 专利标题（中）： 线结构及其制造方法
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申请号： US12042402申请日： 2008-03-05
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公开(公告)号： US08120534B2公开(公告)日： 2012-02-21
- 发明人: Eun-seok Park , Jeong-hae Lee , Young-eil Kim , Jong-seok Kim , Ick-jae Yoon , Young-ho Ryu , Jae-hyun Park
- 申请人： Eun-seok Park , Jeong-hae Lee , Young-eil Kim , Jong-seok Kim , Ick-jae Yoon , Young-ho Ryu , Jae-hyun Park
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： NSIP Law
- 优先权： KR10-2007-0107438 20071024
- 主分类号： H01Q1/38
- IPC分类号： H01Q1/38
摘要：
A line structure is provided which includes a ferroelectric film which is formed on at least one surface of both sides of a substrate and a permittivity of which changes according to a magnitude of an applied voltage, an inductor which is formed on a first side of the substrate, and a capacitor which has a capacitance corresponding to the permittivity of the ferroelectric film and the substrate.
公开/授权文献
- US20090108966A1 LINE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 公开/授权日：2009-04-30
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