发明授权
US08123969B2 Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture
失效
使用LF或HF偏置功率和电容耦合的VHF源功率去除高应力膜的方法，具有增强的残留捕获
- 专利标题： Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture
- 专利标题（中）： 使用LF或HF偏置功率和电容耦合的VHF源功率去除高应力膜的方法，具有增强的残留捕获
-
申请号： US12421402申请日： 2009-04-09
-
公开(公告)号： US08123969B2公开(公告)日： 2012-02-28
- 发明人: Karl M. Brown , John A. Pipitone , Vineet H. Mehta
- 申请人： Karl M. Brown , John A. Pipitone , Vineet H. Mehta
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Robert M. Wallace
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461 ; C25F3/02
摘要：
A method of fabricating multilayer interconnect structures on a semiconductor wafer uses an interior surface of a metal lid that has been roughed to a surface roughness in excess of RA 2000 with a reentrant surface profile. The metal lid is installed as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.