Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same

Invention Grant

US08124526B2 Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same 失效

Title translation: 形成薄铁电体层的方法和制造其的半导体器件的制造方法

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Patent Title: Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same
Patent Title (中): 形成薄铁电体层的方法和制造其的半导体器件的制造方法
Application No.: US12503440

Application Date: 2009-07-15
Publication No.: US08124526B2

Publication Date: 2012-02-28
Inventor: Suk-Hun Choi , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon
Applicant: Suk-Hun Choi , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec, P.A.
Priority: KR10-2008-0069681 20080717
Main IPC: H01L21/4763
IPC: H01L21/4763

Methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device including the same

Abstract:

In methods of forming a thin ferroelectric layer and methods of manufacturing a semiconductor device, a preliminary ferroelectric layer is formed on a substrate by depositing a metal oxide including lead, zirconium and titanium. The surface of the preliminary ferroelectric layer is polished using a slurry composition including an acrylic acid polymer, abrasive particles, and water to form a thin ferroelectric layer on the substrate. The slurry composition may reduce a polishing rate of the preliminary ferroelectric layer such that removal of a bulk portion of the preliminary ferroelectric layer may be suppressed and the surface roughness of the preliminary ferroelectric layer may be improved.

Abstract(Chinese):

在形成薄铁电体层的方法和制造半导体器件的方法中，通过沉积包括铅，锆和钛的金属氧化物，在衬底上形成初步铁电层。使用包括丙烯酸聚合物，磨料颗粒和水的浆料组合物对预制铁电层的表面进行抛光，以在基材上形成薄铁电层。浆料组合物可以降低预备铁电体层的抛光速率，从而可以抑制初级铁电层的体积部分的去除，并且可以提高预铁电层的表面粗糙度。

Public/Granted literature

US20100015729A1 METHODS OF FORMING A THIN FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2010-01-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）