Invention Grant
US08124963B2 Thin film transistor, method of fabricating the thin film transistor, organic light emitting diode display device, method of fabricating the organic light emitting diode display device, and donor substrate for laser induced thermal imaging
有权
薄膜晶体管，制造薄膜晶体管的方法，有机发光二极管显示装置，制造有机发光二极管显示装置的方法和用于激光诱导热成像的供体基板
- Patent Title: Thin film transistor, method of fabricating the thin film transistor, organic light emitting diode display device, method of fabricating the organic light emitting diode display device, and donor substrate for laser induced thermal imaging
- Patent Title (中): 薄膜晶体管，制造薄膜晶体管的方法，有机发光二极管显示装置，制造有机发光二极管显示装置的方法和用于激光诱导热成像的供体基板
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Application No.: US12207025Application Date: 2008-09-09
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Publication No.: US08124963B2Publication Date: 2012-02-28
- Inventor: Min-Chul Suh , Seong-Taek Lee
- Applicant: Min-Chul Suh , Seong-Taek Lee
- Applicant Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyunggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2007-0093539 20070914
- Main IPC: H01L35/24
- IPC: H01L35/24 ; H01L21/00 ; H01L21/84 ; H01L29/10
Abstract:
A thin film transistor (TFT), a method of fabricating the TFT, an organic light emitting diode (OLED) display device, a method of fabricating the OLED display device, and a donor substrate for laser induced thermal imaging (LITI) includes interconnections formed of a mixed layer of metal nanoparticles and carbon black using a laser induced thermal imaging (LITI) technique.
Public/Granted literature
Information query
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