A capacitor structure includes a semiconductor substrate; a first capacitor plate positioned on the semiconductor substrate, the first capacitor plate including a polysilicon structure having a surrounding spacer; a silicide layer formed in a first portion of an upper surface of the first capacitor plate; a capacitor dielectric layer formed over a second portion of the upper surface of the first capacitor plate and extending laterally beyond the spacer to contact the semiconductor substrate; a contact in an interlayer dielectric (ILD), the contact contacting the silicide layer and a first metal layer over the ILD; and a second capacitor plate over the capacitor dielectric layer, wherein a metal-insulator-metal (MIM) capacitor is formed by the first capacitor plate, the capacitor dielectric layer and the second capacitor plate and a metal-insulator-semiconductor (MIS) capacitor is formed by the second capacitor plate, the capacitor dielectric layer and the semiconductor substrate.