发明授权
US08125746B2 Magnetic sensor with perpendicular anisotrophy free layer and side shields
有权
具有垂直各向异性自由层和侧面屏蔽的磁性传感器
- 专利标题： Magnetic sensor with perpendicular anisotrophy free layer and side shields
- 专利标题（中）： 具有垂直各向异性自由层和侧面屏蔽的磁性传感器
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申请号： US12502204申请日： 2009-07-13
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公开(公告)号： US08125746B2公开(公告)日： 2012-02-28
- 发明人: Dimitar V. Dimitrov , Zheng Gao , Wonjoon Jung , Paul Edward Anderson , Olle Gunnar Heinonen
- 申请人： Dimitar V. Dimitrov , Zheng Gao , Wonjoon Jung , Paul Edward Anderson , Olle Gunnar Heinonen
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Mueting Raasch & Gebhardt PA
- 主分类号： G11B5/127
- IPC分类号： G11B5/127
摘要：
A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.
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