发明授权
US08125832B2 Variable initial program voltage magnitude for non-volatile storage
有权
用于非易失性存储的可变初始编程电压幅度
- 专利标题: Variable initial program voltage magnitude for non-volatile storage
- 专利标题(中): 用于非易失性存储的可变初始编程电压幅度
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申请号: US12482696申请日: 2009-06-11
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公开(公告)号: US08125832B2公开(公告)日: 2012-02-28
- 发明人: Nima Mokhlesi
- 申请人: Nima Mokhlesi
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies Inc.
- 当前专利权人: SanDisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Vierra Magen Marcus & DeNiro LLP
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming process operates to program at least a subset of said non-volatile storage elements to a set of target conditions using program pulses. In one embodiment, a first programming pass includes soft programming and additional programming passes include the programming of data. In another embodiment, all of the programming process includes programming data. For at least a subset of said programming processes, a program pulse associated with achieving a particular result for a respective programming process is identified. The identified program pulse is used to adjust programming for a subsequent programming process.
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