发明授权
US08129286B2 Reducing effective dielectric constant in semiconductor devices 有权
降低半导体器件中的有效介电常数

Reducing effective dielectric constant in semiconductor devices
摘要:
Method of manufacturing a semiconductor device structure, including the steps of providing a structure having an insulator layer with at least one interconnect, forming a sub lithographic template mask over the insulator layer, and selectively etching the insulator layer through the sub lithographic template mask to form sub lithographic features spanning to a sidewall of the at least one interconnect.
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