发明授权
- 专利标题: Magneto-resistance effect element having a diffusive electron scattering layer, magneto-resistance effect head, magnetic storage and magnetic memory
- 专利标题(中): 具有漫射电子散射层的磁阻效应元件,磁阻效应头,磁存储和磁存储器
-
申请号: US12879642申请日: 2010-09-10
-
公开(公告)号: US08130477B2公开(公告)日: 2012-03-06
- 发明人: Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
- 申请人: Hideaki Fukuzawa , Masahiro Takashita , Hiromi Yuasa , Yoshihiko Fuji , Hitoshi Iwasaki
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Nixon & Vanderhye, P.C.
- 优先权: JP2005-285240 20050929
- 主分类号: G11B5/36
- IPC分类号: G11B5/36
摘要:
A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.