发明授权
- 专利标题: Semiconductor memory device inputting and outputting a plurality of data length formats and method thereof
- 专利标题(中): 半导体存储器件输入和输出多种数据长度格式及其方法
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申请号: US11806585申请日: 2007-06-01
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公开(公告)号: US08131897B2公开(公告)日: 2012-03-06
- 发明人: Soo-Young Kim , Mi-Jo Kim , Jung-Soo Ryoo
- 申请人: Soo-Young Kim , Mi-Jo Kim , Jung-Soo Ryoo
- 申请人地址: KR Gyeonngi-Do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonngi-Do
- 代理机构: Harness, Dickey & Pierce, PLC
- 优先权: KR10-2006-0118964 20061129
- 主分类号: G06F13/12
- IPC分类号: G06F13/12 ; G06F13/00
摘要:
A semiconductor memory device and method thereof are provided. The example semiconductor memory device may include a first processor configured to exchange data with a first data length format, a second processor configured to exchange data with a second data length format and a shared memory configured to store data, the shared memory being shared by the first and second processors, the shared memory further configured to receive a read command from at least one of the first and second processors and to output data in response to the read command based on which of the first and second data length formats is used by the processor issuing the read command.
公开/授权文献
- US20080126604A1 Semiconductor memory device and method thereof 公开/授权日:2008-05-29
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