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发明授权
US08133402B2 Pattern forming method, charged particle beam writing apparatus, and recording medium on which program is recorded 有权
图案形成方法，带电粒子束写入装置和记录有程序的记录介质

Pattern forming method, charged particle beam writing apparatus, and recording medium on which program is recorded
摘要：
A pattern forming method includes performing a first resist development during a first time period to a substrate obtained by coating a resist film having a predetermined thickness onto a predetermined film to be etched, measuring the film thickness of the resist film after the first resist development, writing a predetermined pattern corrected in dimension on the basis of an amount of reduction in thickness of the resist film on the resist film by using a charged particle beam, performing a second resist development during a second time period which is longer than the first time period to the substrate after writing the pattern, and etching the predetermined film to be etched by using the resist film after the second resist development as a mask.
摘要（中）：

图案形成方法包括在第一时间段内对通过将具有预定厚度的抗蚀剂膜涂覆到要蚀刻的预定膜上获得的基板进行第一抗蚀剂显影，测量第一抗蚀剂显影后的抗蚀剂膜的膜厚度， 基于通过使用带电粒子束在抗蚀剂膜上的抗蚀剂膜的厚度减小量来量化尺寸校正的预定图案，在比第一时间段长的第二时间段内执行第二抗蚀剂显影 在写入图案之后到基板，并且在第二抗蚀剂显影之后用抗蚀剂膜作为掩模蚀刻要蚀刻的预定膜。

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