Invention Grant
- Patent Title: Electron gun evaporation apparatus and film formation method using the electron gun evaporation apparatus
- Patent Title (中): 电子枪蒸发装置和使用电子枪蒸发装置的成膜方法
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Application No.: US12438452Application Date: 2008-01-29
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Publication No.: US08133528B2Publication Date: 2012-03-13
- Inventor: Masato Nakayama
- Applicant: Masato Nakayama
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-018694 20070130
- International Application: PCT/JP2008/051311 WO 20080129
- International Announcement: WO2008/093676 WO 20080807
- Main IPC: B05C11/10
- IPC: B05C11/10

Abstract:
An electron gun evaporation apparatus capable of efficiently using an evaporation source includes an electron beam position controller which determines, as an applicable range, a range within which the distribution of the film thickness growth rate is almost constant in each scanning direction of an electron beam to be applied to an evaporation source in a crucible for the irradiation position of the electron beam, on the basis of information pertaining to the electron beam irradiation position and the film thickness growth rate in the electron beam irradiation position.
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