发明授权
US08133547B2 Photoresist coating composition and method for forming fine contact of semiconductor device
失效
光刻胶涂料组合物和形成半导体器件精细接触的方法
- 专利标题： Photoresist coating composition and method for forming fine contact of semiconductor device
- 专利标题（中）： 光刻胶涂料组合物和形成半导体器件精细接触的方法
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申请号： US11772578申请日： 2007-07-02
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公开(公告)号： US08133547B2公开(公告)日： 2012-03-13
- 发明人: Jae Chang Jung
- 申请人： Jae Chang Jung
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： Marshall, Gerstein & Borun LLP
- 优先权： KR10-2005-0045481 20050530
- 主分类号： C08F2/46
- IPC分类号： C08F2/46
摘要：
A coating composition containing a coating base resin and a C4-C10 alcohol as a main solvent, and a method for forming a fine contact of a semiconductor device including the steps of preparing the coating composition, forming a photoresist film on a semiconductor substrate having an underlying layer, performing exposure with a contact mask and developing processes to form a photoresist pattern for contact on the photoresist film, and coating the coating composition on the photoresist pattern to form a coating film.
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