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US08133757B2 Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current 有权
制造具有增强结构以减少复位电流的相变存储器单元的方法

Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current
摘要：
A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.
摘要（中）：

相变存储单元包括下电极，具有开口的绝缘层间结构，相变材料层和上电极。 下电极形成在基板上。 绝缘层间结构具有开口并且形成在下电极和基板上。 开口露出下电极并且具有向下逐渐减小的宽度。 相变材料层填充开口并部分地覆盖绝缘层间结构的上表面。 上电极形成在相变材料层上。

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