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US08134187B2 Integrated mask-programmable logic devices with multiple metal levels and manufacturing process thereof 有权
具有多种金属级别的集成掩模可编程逻辑器件及其制造工艺

Integrated mask-programmable logic devices with multiple metal levels and manufacturing process thereof
Abstract:
Integrated mask-programmable device, having a plurality of metal levels including a top metal level, a bottom metal level and a first intermediate metal level formed between the top and bottom metal levels, and a plurality of via levels arranged between the bottom and the first intermediate metal levels and between the first intermediate and the top metal levels and connecting each metal level to adjacent metal levels. The plurality of metal levels forms a first, a second and at least a third terminal, the top and bottom metal levels having at least two metal regions, and the first intermediate metal level having at least three metal regions. The first terminal is connected to third terminal or the second terminal is connected to the third terminal by modifying a single metal or via level.
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