发明授权
US08134192B2 Integrated structure of MEMS device and CMOS image sensor device
有权
MEMS器件和CMOS图像传感器器件的集成结构
- 专利标题： Integrated structure of MEMS device and CMOS image sensor device
- 专利标题（中）： MEMS器件和CMOS图像传感器器件的集成结构
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申请号： US12888418申请日： 2010-09-23
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公开(公告)号： US08134192B2公开(公告)日： 2012-03-13
- 发明人: Hui-Shen Shih
- 申请人： Hui-Shen Shih
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113 ; H01L29/82
摘要：
An integrated structure of MEMS device and CIS device and a fabricating method thereof includes providing a substrate having a CIS region and a MEMS region defined therein with a plurality of CIS devices positioned in the CIS region; performing a multilevel interconnect process to form a multilevel interconnect structure in the CIS region and the MEMS region and a micro-machined mesh metal in the MEMS region on a front side of the substrate; performing a first etching process to form a chamber in MEMS region in the front side of the substrate; forming a first mask pattern and a second mask pattern respectively in the CIS region and the MEMS region on a back side of the substrate; and performing a second etching process to form a plurality of vent holes connecting to the chamber on the back side of the substrate through the second mask pattern.
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