发明授权
- 专利标题： Ferroelectric memory and method for testing the same
- 专利标题（中）： 铁电存储器和测试方法相同
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申请号： US12404157申请日： 2009-03-13
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公开(公告)号： US08134855B2公开(公告)日： 2012-03-13
- 发明人: Ryu Ogiwara , Daisaburo Takashima
- 申请人： Ryu Ogiwara , Daisaburo Takashima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Knobbe Martens Olson & Bear, LLP
- 优先权： JPP2008-65693 20080314
- 主分类号： G11C11/22
- IPC分类号： G11C11/22
摘要：
A driver circuit and a precharge circuit apply, in a test mode, a fixed potential to a bit-line, while applying a second plate-line voltage to a plate-line. Then, the bit-line is switched from a first bit-line precharge potential to a floating state, and the plate-line voltage is raised from the second plate-line voltage to a plate-line voltage.
公开/授权文献
- US20090231903A1 FERROELECTRIC MEMORY AND METHOD FOR TESTING THE SAME 公开/授权日：2009-09-17
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