发明授权
US08138035B2 Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels
有权
用于形成具有对准（100）NMOS和（110）PMOS FinFET侧壁通道的集成电路的方法
- 专利标题： Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels
- 专利标题（中）： 用于形成具有对准（100）NMOS和（110）PMOS FinFET侧壁通道的集成电路的方法
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申请号： US13036938申请日： 2011-02-28
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公开(公告)号： US08138035B2公开(公告)日： 2012-03-20
- 发明人: Weize Xiong , Cloves Rinn Cleavelin , Angelo Pinto , Rick L. Wise
- 申请人： Weize Xiong , Cloves Rinn Cleavelin , Angelo Pinto , Rick L. Wise
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of forming an integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.
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